Asymmetric dielectric charging phenomena on SiN films used in RF MEMS capacitive switches

The present paper investigates the effect of stressing bias polarity to the discharge process of PECVD SiN films that takes place through the bulk of the dielectric film, with the aid of Kelvin Probe method, and the results are correlated to the material´s properties. A new physical model is used in order to gain a better understanding to the processes that are responsible for the appearance of asymmetric dielectric charging on these films. The proposed model can be also used to predict the time evolution of discharging processes on dielectric films with known characteristics and therefore to be included in device reliability modeling.