RF LDMOS with excellent robustness for wideband application

A RF LDMOS with an additional P-type implant below channel region is presented to achieve high ruggedness. With the help of this implantation, the device shows significantly improved snapback performance. Besides on-wafer TLP test, we propose a more rigorous `open´-circuit test to demonstrate this fantastic robustness. The Faraday shield and drift region is finely engineered to achieve optimum Rds(on)-BV trade-off. A 1um-drift length device is shown to achieve more than 300mA/mm saturation current and 1.6W/mm power density at 1dB compression, while maintaining HCI immunity. A power amplifier is implemented from 400MHz to 470MHz to verify the broadband performance.