DocumentCode :
3750852
Title :
A broadband SiGe Power Amplifier for E-band communication applications
Author :
Manuel Bejarano Carmona;Tobias Tired
Author_Institution :
Siversima A.B., Torshamnsgatan 9, S-164 40, Kista, Sweden
Volume :
3
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
This work presents a broadband SiGe Power Amplifier (PA) for operation between 60-90 GHz covering both 71-76 GHz and 81-86 GHz E-Band sub-bands. It consists of a two-stage differential cascode amplifier using an LC-interstage matching network in the interface between the stages. Single-ended to differential conversion is accomplished by the use of two stacked 1-to-1 transformers, achieving a simulated insertion loss of 0.63 dB and 0.45 dB at input and output, respectively. The design has been implemented using Infineon B7HF200 0.18 pm SiGe HBT process with fp/fmax 200/250 GHz. Measured performance indicates that the PA delivers 12.6 dBm saturated output power (Psat) with 4.6% peak Power Added Efficiency (PAE) at 84 GHz while providing at least 6 dB of gain covering a frequency range from 62 to 90 GHz. The circuit consumes 102 mA from a 2.8 V power supply and occupies an area of 0.105 mm2.
Keywords :
"Frequency measurement","Transistors","Silicon germanium","Metals","Broadband communication","Power generation","Gain"
Publisher :
ieee
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
Type :
conf
DOI :
10.1109/APMC.2015.7413435
Filename :
7413435
Link To Document :
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