• DocumentCode
    3750853
  • Title

    X-band 11.7-W, 29-dB gain, 42% PAE three-stage pHEMT MMIC power amplifier

  • Author

    Hongfei Yao;Tingting Yuan;Guoguo Liu;Xiaoxi Ning;Zhi Jin;Xinyu Liu

  • Author_Institution
    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents an X-band high gain and high power three-stage PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA). Based on 0.15-μm GaAs power PHEMT technology, this PA is fabricated on a 2-mil thick wafer. While operating under 7.2 V and 3300 mA dc bias condition, the characteristics of 29.2-dB small signal gain, 11.7-W output power, and 42.2% power added efficiency at 9.2 GHz can be achieved.
  • Keywords
    "MMICs","Power amplifiers","PHEMTs","Power generation","Gain","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413436
  • Filename
    7413436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750853