Title :
A GaAs Planar Schottky Barrier Diode (PSBD) and its application in terahertz integrated mixers
Author :
Li Qian;Tong Xiaodong;Wang Wenjie;Deng Xiaodong;Liu Haitao;Tang Hailin;Yong-Zhong Xiong
Author_Institution :
Semiconductor Device Research Laboratory, Terahertz Research Center, CAEP, Chengdu, 611731, China
Abstract :
A GaAs Planar Schottky Barrier Diode (PSBD) with Schottky contact radium of 1μm has been fabricated using Electron Beam Lithography method. The measured ideality factor, reverse current, series resistance, junction capacitance and the cut-off frequency of the PSBD are ~1.29, ~150 fA, ~3 A, ~11 fF and ~4.8 THz, respectively. A 340GHz 4× sub-harmonic mixer (SHM) chip was designed using the proposed GaAs PSBD. The 4× SHM was measured through on-wafer testing. With LO frequency of 85 GHz, the measured conversion loss of ~51 dB was obtained. The 4× SHM chip occupies 600μm× 970μm including the testing pads.
Keywords :
"Frequency measurement","Schottky barriers","Semiconductor device measurement","Gallium arsenide","Schottky diodes","Current measurement","Electrical resistance measurement"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7413447
