Title :
An 89 GHz single-balanced mixer design in 1 um InP DHBT technology
Author :
Xiaoxi Ning;Hongfei Yao;Danyu Wu;Yongbo Su;Zhi Jin
Author_Institution :
Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) 3 Beitucheng West Road, Chaoyang, Beijing, China
Abstract :
This paper demonstrates an active single-balanced mixer with InP double heterojunction bipolar transistor (DHBT) process for direct down-conversion system at 89 GHz. Authors use Coplanar Waveguide (CPW) as on-chip transmission line and tune an on-chip CPW balun to allocate LO signal to the switch cell. Benefiting from its balanced structure, this mixer shows a LO port to RF port isolation above 20 dB in all W-band. Its conversion gain is up to 3 dB with a 3 dB RF bandwidth more than 10 GHz. With a 10 dBm LO signal, the RF input 1 dB compression point is higher than -4 dBm around 89 GHz. This mixer consumes 340 mW power with a +4 V supply. All wafers have been thinned to 100 um before measurements.
Keywords :
"Mixers","Coplanar waveguides","Radio frequency","Indium phosphide","III-V semiconductor materials","Double heterojunction bipolar transistors","DH-HEMTs"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7413549