• DocumentCode
    3750976
  • Title

    Fully integrated wideband power amplifier in GaN technology

  • Author

    B. H. Park;S. H. Jang;C. H. Kim;J. H. Jung

  • Author_Institution
    Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu Daejeon, 305-700, Republic of Korea
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A fully integrated wideband power amplifier (PA) has been developed by using gallium nitride (GaN) 0.25-p.m technology. The PA is designed with commercial GaN process, in a single-ended configuration, starting from on-chip in-out matching. This PA adopts the saturated architecture and achieves average drain efficiency of 43.8% from 2.0 GHz to 3.0 GHz with an average output power and gain of 38 dBm and 15.4 dB respectively.
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413560
  • Filename
    7413560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750976