Title :
Fully integrated wideband power amplifier in GaN technology
Author :
B. H. Park;S. H. Jang;C. H. Kim;J. H. Jung
Author_Institution :
Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu Daejeon, 305-700, Republic of Korea
Abstract :
A fully integrated wideband power amplifier (PA) has been developed by using gallium nitride (GaN) 0.25-p.m technology. The PA is designed with commercial GaN process, in a single-ended configuration, starting from on-chip in-out matching. This PA adopts the saturated architecture and achieves average drain efficiency of 43.8% from 2.0 GHz to 3.0 GHz with an average output power and gain of 38 dBm and 15.4 dB respectively.
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7413560
