• DocumentCode
    3752298
  • Title

    Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

  • Author

    A. Caruso;P. Spirito;G. Vitale;G. Busatto;G. Ferla

  • Author_Institution
    Department of Electronic Engineering, University of Naples via Claudio, 21, 80125, Italy
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    104
  • Lastpage
    111
  • Abstract
    The fabrication and the characterization of a family of power Bipolar Mode JFET´s (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance of the present device, with respect to the Bipolar Transistor.
  • Keywords
    "Logic gates","Performance evaluation","Epitaxial growth","Field effect transistors","Junctions","Density measurement","Current measurement"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1986 17th Annual IEEE
  • ISSN
    0275-9306
  • Print_ISBN
    978-9-9963-2327-0
  • Type

    conf

  • DOI
    10.1109/PESC.1986.7415552
  • Filename
    7415552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752298