DocumentCode
37526
Title
Determination of Ultimate Leakage Through Rutile
and Tetragonal
Author
Clima, S. ; Kaczer, Ben ; Govoreanu, B. ; Popovici, Mihaela ; Swerts, Johan ; Verhulst, Anne S. ; Jurczak, Malgorzata ; De Gendt, Stefan ; Pourtois, G.
Author_Institution
imec, Leuven, Belgium
Volume
34
Issue
3
fYear
2013
fDate
Mar-13
Firstpage
402
Lastpage
404
Abstract
First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random access memory metal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses mtunnel have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.
Keywords
DRAM chips; MIM devices; ab initio calculations; capacitors; insulating materials; titanium compounds; tunnelling; zirconium compounds; TiO2; ZrO2; ab initio complex band calculations; complex band structures; complex wave vectors; dynamic random access memory; intrinsic leakage; metal-insulator-metal capacitors; rutile insulating materials; tetragonal insulating materials; tunneling effective mass; ultimate leakage; Dielectrics; Effective mass; MIM capacitors; Materials; Random access memory; Tunneling; $ hbox{ZrO}_{2}$ ; $hbox{TiO}_{2}$ ; Imaginary bands; tunneling effective mass;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2238885
Filename
6425405
Link To Document