• DocumentCode
    37526
  • Title

    Determination of Ultimate Leakage Through Rutile  \\hbox {TiO}_{2} and Tetragonal \\hbox {ZrO}_{2}

  • Author

    Clima, S. ; Kaczer, Ben ; Govoreanu, B. ; Popovici, Mihaela ; Swerts, Johan ; Verhulst, Anne S. ; Jurczak, Malgorzata ; De Gendt, Stefan ; Pourtois, G.

  • Author_Institution
    imec, Leuven, Belgium
  • Volume
    34
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    402
  • Lastpage
    404
  • Abstract
    First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random access memory metal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses mtunnel have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.
  • Keywords
    DRAM chips; MIM devices; ab initio calculations; capacitors; insulating materials; titanium compounds; tunnelling; zirconium compounds; TiO2; ZrO2; ab initio complex band calculations; complex band structures; complex wave vectors; dynamic random access memory; intrinsic leakage; metal-insulator-metal capacitors; rutile insulating materials; tetragonal insulating materials; tunneling effective mass; ultimate leakage; Dielectrics; Effective mass; MIM capacitors; Materials; Random access memory; Tunneling; $ hbox{ZrO}_{2}$; $hbox{TiO}_{2}$ ; Imaginary bands; tunneling effective mass;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2238885
  • Filename
    6425405