• DocumentCode
    3752651
  • Title

    Effects of deposition temperature on the structural, optical, and electrical properties of hydrogenated of Ga-doped ZnO film

  • Author

    Jung-Ruey Tsai;Neng-Fu Shih;Rong-Hwei Yeh

  • Author_Institution
    Dep. of Photonics and Communication Engineering, Asia University, No. 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    GZO thin films were prepared on a glass substrate by dc magnetron sputtering with hydrogen at various deposition temperatures (Td). As a result of the incorporation of hydrogen atoms that acted as shallow donors, the carrier concentration of each film initially increased when Td increased from 25 °C to 175 °C but then decreased as Td further increased. Film mobility and carrier concentration exhibited the similar trend with deposition temperature. The lowest resistivity, 8.1 × 10-4 Ω cm, was obtained for the film grown at 175 °C, which has a carrier concentration of 1.1 × 1021 cm-3.
  • Keywords
    "Films","Hydrogen","Zinc oxide","II-VI semiconductor materials","Conductivity","Sputtering","Stress"
  • Publisher
    ieee
  • Conference_Titel
    Microoptics Conference (MOC), 2015 20th
  • Print_ISBN
    978-4-8634-8487-0
  • Type

    conf

  • DOI
    10.1109/MOC.2015.7416430
  • Filename
    7416430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752651