Memristive switching in planar devices based on vanadium dioxide thin films using near IR laser pulses

By utilizing a 966 nm near infrared laser as an excitation light for resistance switching, we demonstrated memristive states in a two-terminal planar device based on a vanadium dioxide thin film. Before stimulating the device with 966 nm laser pulses, the device was thermally biased at ~71.5 °C. Six multi-states of the device resistance could be obtained in the fabricated device by five consecutive laser pulses with 10 ms duration and increasing power, and the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5 s after the illumination.