Title :
DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
Author :
Zine-eddine Touati;Zahra Hamaizia;Zitouni Messai
Author_Institution :
Electrical Engineering Department, Faculty of Sciences and Technology, University of Biskra, Algeria
Abstract :
In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current. The innovative MOS-HEMT technique reduces the leakage current.
Keywords :
"HEMTs","Logic gates","Aluminum gallium nitride","Wide band gap semiconductors","Aluminum oxide","Leakage currents","Dielectrics"
Conference_Titel :
Electrical Engineering (ICEE), 2015 4th International Conference on
DOI :
10.1109/INTEE.2015.7416850
