Title :
A process variation compensated comparator for FSK demodulators
Author :
Kim, Hong-Sun ; Yoo, Seoung-Jae ; Ismail, Mohammed ; Olsson, Helena
Author_Institution :
Radio Electron. Lab, R. Inst. of Technol., Kista, Sweden
Abstract :
An inverter based comparator design is presented. The comparator has inherently process variation compensated structure which makes the threshold voltage of the comparator independent of the process variation. The compensation structure consists of one additional inverter and four triode region operating transistors. The comparator is designed for FSK demodulation applications and simulated with 0.35 μm CMOS technology
Keywords :
CMOS analogue integrated circuits; comparators (circuits); demodulators; frequency shift keying; 0.35 micron; CMOS technology; FSK demodulation; inverter based comparator; mobile communication; process variation compensated structure; threshold voltage; triode region operating transistors; CMOS process; CMOS technology; Circuits; Demodulation; Energy consumption; Frequency shift keying; Inverters; MOSFETs; Robustness; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.952908
