Title :
Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunneling current
Author :
Harabech, N. ; Bouchakour, R. ; Canet, P. ; Autran, J.L. ; Pizzuto, O.
Author_Institution :
Lab. Materiaux et Microelectron. de Provence, IMT Technopole de Chateau Gombert, Marseille, France
Abstract :
A semi-quantum model of tunnel current through N-polysilicon/Oxide/N+-silicon structure is implemented in order to simulate transient behavior of an EEPROM memory cell. This model depends on the sheet charge, electron impact frequency on the interface and tunneling probability. A comparison of this model with Fowler-Nordheim model is given
Keywords :
EPROM; integrated circuit modelling; transient analysis; tunnelling; EEPROM memory cell; Fowler-Nordheim model; N-polysilicon/oxide/N+-silicon structure; Si-SiO2-Si; interfacial electron impact frequency; semi-quantum model; sheet charge; transient simulation; tunneling current; tunneling probability; Circuit simulation; EPROM; Electrons; Frequency; Nonvolatile memory; Semiconductor device modeling; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.952921
