• DocumentCode
    3755450
  • Title

    Chapter XIII semiconducting compounds

  • Author

    A. C. Beer;K. E. Cochran

  • Author_Institution
    Semiconductor and Dielectrics Division, Battelle Memorial Institute, Columbus, Ohio, United States of America
  • fYear
    1952
  • Firstpage
    136
  • Lastpage
    152
  • Abstract
    Welker (1) reports on the semiconducting properties of compounds of elements of Group III of the periodic system (Al, Ga, In) with elements of Group V (P, As, Sb). Predictions of their electrical properties based on bonding considerations agree well with the experimental results. Several properties of these compounds surpass those of elements of Group IV; thus the electron mobility of InSb has been measured to be as high as 25,000 cm.2/volt-sec.
  • Keywords
    "Semiconductor device measurement","Gallium","Bonding","Intermetallic","Silicon","Semiconductor diodes","Thermal expansion"
  • Publisher
    ieee
  • Conference_Titel
    Literature on Dielectrics, Digest of
  • Type

    conf

  • Filename
    7420370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3755450