Title :
High-voltage GaAs power-HBTs for base-station amplifiers
Author :
Kurpas, P. ; Brunner, F. ; Doemer, R. ; Janke, B. ; Heymann, P. ; Maasdorf, A. ; Doser, W. ; Auxemery, P. ; Blanck, H. ; Pons, D. ; Wurfl, J. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; 2 GHz; 26 V; 27 V; 3.2 W; 74 percent; GaAs; GaAs power HBTs; HV operation; base-station amplifiers; bias voltages; breakdown voltage; high-voltage HBTs; Base stations; Doping; Electronic ballasts; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MESFETs; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966974
