A power PHEMT device technology for broadband wireless access

Author

Miller, M. ; Peatman, B. ; Hooper, R.

Author_Institution

Wireless Infrastructure Syst. Div., Motorola Inc., Tempe, AZ, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

637

Abstract

An unmatched power InGaAs PHEMT transistor in a ceramic package has been developed for broadband wireless access (BWA) applications. Operating at 3.5 GHz, from 12 V supplies, a typical device delivers more than 40 dBm of peak envelope power at -30 dBc IMD with drain efficiencies as high as 58% in class AB mode. Under the stringent W-CDMA spec of -40 dBc adjacent channel power (with 11.2 dB peak-to-average signal ratio), a small signal gain of 9.5 dB and linear power in excess of 31.5 dBm with 36% efficiency is obtained in class AB mode. Our paper presents the device technology, and the DC and RF performance under W-CDMA and two-tone excitation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; radio access networks; semiconductor device packaging; 12 V; 3.5 GHz; 36 percent; 58 percent; 9.5 dB; DC performance; InGaAs; InGaAs PHEMT; RF performance; W-CDMA specification; broadband wireless access; ceramic package; class AB mode; power PHEMT device technology; pseudomorphic HEMT; two-tone excitation; Etching; FETs; Gallium arsenide; Gold; Multiaccess communication; PHEMTs; Passivation; Radio frequency; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966975

Filename

966975