Title :
A 240 W power heterojunction FET with high efficiency for W-CDMA base stations
Author :
Takenaka, I. ; Ishikura, K. ; Takahashi, K. ; Kishi, K. ; Ogasawara, Y. ; Hasegawa, K. ; Takahashi, H. ; Emori, F. ; Iwata, N.
Author_Institution :
Compound Semicond. Device Div., NEC Corp., Japan
Abstract :
An L/S-band highly efficient 240 W GaAs FET amplifier has been developed. The amplifier employed newly developed pseudomorphic heterojunction FETs (HJFETs) exhibiting large drain current and high gm characteristics. In addition, we employed the second harmonic tuning for the input and output matching circuit to obtain the high efficiency characteristics. The developed push-pull amplifier demonstrated 53.8-dBm (240 W) output power with 50% power added-efficiency and 12-dB linear gain at 2.12 GHz. It also showed low adjacent channel leakage power ratio (ACPR) of less than -35 dBc with a power-added efficiency of 28% at an output power of 45 dBm. The developed amplifier is suitable for digital cellular base station applications.
Keywords :
III-V semiconductors; JFET circuits; UHF circuits; UHF field effect transistors; UHF power amplifiers; cellular radio; code division multiple access; differential amplifiers; gallium arsenide; junction gate field effect transistors; power field effect transistors; telephone sets; 12 dB; 2.12 GHz; 240 W; FET amplifier; GaAs; L-band; S-band; W-CDMA base stations; digital cellular base station; high efficiency; high gain characteristics; input matching circuit; large drain current; linear gain; low adjacent channel leakage power ratio; output matching circuit; power added-efficiency; power heterojunction FET; pseudomorphic heterojunction FET; push-pull amplifier; second harmonic tuning; Base stations; Circuit optimization; FETs; Gain; Gallium arsenide; Heterojunctions; Impedance matching; Multiaccess communication; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966977
