Title :
On the Gunn effect in GaAs HBTs
Author :
Rudolph, M. ; Doerner, R. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
A negative RF-resistance effect in GaAs HBTs is described. It results from the nonlinear velocity-field characteristic in GaAs, takes place in the bulk collector, and leads to |S/sub 22/| exceeding unity. Dependence on bias point and collector doping, and consequences for modeling are discussed.
Keywords :
Gunn effect; III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power transistors; negative resistance; power bipolar transistors; semiconductor device models; GaAs; GaAs HBTs; Gunn effect; HV HBTs; bias point dependence; bulk collector; collector doping dependence; high-voltage HBTs; modeling; negative RF-resistance effect; nonlinear velocity-field characteristic; Current density; Doping; Electrons; Gallium arsenide; Gunn devices; Heterojunction bipolar transistors; Kirk field collapse effect; MESFETs; Satellites; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966986
