Title :
Intrinsic noise currents in deep submicron MOSFETs
Author :
Chih-Hung Chen ; Deen, M.J. ; Yuhua Cheng ; Matloubian, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
A systemic extraction method to obtain the induced gate noise (i/sub g/i/sub g/*), channel thermal noise (i/sub d/i/sub d/*) and their cross-correlation term (i/sub g/i/sub d/*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18 /spl mu/m CMOS process are presented and discussed.
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; equivalent circuits; field effect MMIC; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; 0.18 micron; RF noise measurements; RFICs; bias condition; channel length; channel thermal noise; cross-correlation term; deep submicron CMOS process; deep submicron MOSFETs; extraction method; frequency; induced gate noise; intrinsic noise currents; scattering measurements; Admittance; CMOS process; Circuit noise; FETs; MOSFETs; Matrix converters; Noise measurement; Radio frequency; Radiofrequency integrated circuits; Scattering;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967022
