Intrinsic noise currents in deep submicron MOSFETs

Author

Chih-Hung Chen ; Deen, M.J. ; Yuhua Cheng ; Matloubian, M.

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

835

Abstract

A systemic extraction method to obtain the induced gate noise (i/sub g/i/sub g/*), channel thermal noise (i/sub d/i/sub d/*) and their cross-correlation term (i/sub g/i/sub d/*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18 /spl mu/m CMOS process are presented and discussed.

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; equivalent circuits; field effect MMIC; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; 0.18 micron; RF noise measurements; RFICs; bias condition; channel length; channel thermal noise; cross-correlation term; deep submicron CMOS process; deep submicron MOSFETs; extraction method; frequency; induced gate noise; intrinsic noise currents; scattering measurements; Admittance; CMOS process; Circuit noise; FETs; MOSFETs; Matrix converters; Noise measurement; Radio frequency; Radiofrequency integrated circuits; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967022

Filename

967022