DocumentCode :
375677
Title :
Current mode class-D power amplifiers for high efficiency RF applications
Author :
Kobayashi, H. ; Hinrichs, J. ; Asbeck, P.M.
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Volume :
2
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
939
Abstract :
We show that current mode class-D (CMCD) power amplifiers can achieve high efficiency at RF frequencies. In contrast with conventional voltage-mode class D amplifiers, the CMCD features "zero voltage switching" which eliminates the output capacitance discharge loss. Experimental CMCD amplifiers with 76.3% PAE at 290 mW output and 71.3% PAE at 870 mW output are demonstrated, using GaAs FETs at 900 MHz.
Keywords :
III-V semiconductors; MESFET circuits; UHF power amplifiers; current-mode circuits; gallium arsenide; switching circuits; 290 to 870 mW; 71.3 to 76.3 percent; 900 MHz; GaAs; GaAs MESFETs; class-D power amplifiers; current mode power amplifiers; high efficiency RF applications; zero voltage switching; Filters; Gallium arsenide; High power amplifiers; Inductance; Parasitic capacitance; Radio frequency; Radiofrequency amplifiers; Switches; Zero current switching; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.967047
Filename :
967047
Link To Document :
بازگشت