Title :
An accurate large-signal model for a high-efficient Si bipolar GSM power transistor
Author :
Heeres, R.M. ; Visser, H.A. ; Versleijen, M.P.J.G.
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
We present an accurate large-signal modelling approach for Si bipolar RF power transistors. An equivalent circuit model of a state of the art GSM power transistor (900 MHz, 3.5 V, 4 W, 70%) is constructed. The model is verified with accurate load pull measurements. Large-signal parameters (P/sub out/, G/sub T/, PAE) are predicted accurately.
Keywords :
UHF bipolar transistors; cellular radio; elemental semiconductors; equivalent circuits; power bipolar transistors; semiconductor device models; silicon; 3.5 V; 4 W; 70 percent; 900 MHz; Si; Si bipolar power transistor; bipolar RF power transistors; equivalent circuit model; high-efficiency GSM power transistor; large-signal model; large-signal parameters prediction; load pull measurements; Bonding; Cellular phones; Ceramics; Equivalent circuits; GSM; Metallization; Mobile communication; Power amplifiers; Power transistors; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967055
