Analysis of low frequency memory and influence on solid state HPA intermodulation characteristics

Author

Le Gallou, N. ; Nebus, J.M. ; Ngoya, E. ; Buret, H.

Author_Institution

Alcatel Space Ind., Toulouse, France

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

979

Abstract

A theoretical analysis using two-tone simulations and practical measurements of low frequency memory impact on third order intermodulation (IM3) on HBT as well as HFET power amplifiers is carried out. A particular emphasis is placed on the thermal origin for the HBT case and electrical origin for the HFET case of these low frequency nonlinear phenomena.

Keywords

UHF power amplifiers; intermodulation; thermal analysis; HBT power amplifiers; HFET power amplifiers; LF memory effects; LF nonlinear phenomena; electrical memory effects; electrical origin; high power amplifiers; intermodulation characteristics; low frequency memory; power amplifier IM characteristics; solid state HPA; thermal memory effects; thermal origin; third order IM; third order intermodulation; two-tone simulations; Circuit simulation; Electrothermal effects; Frequency dependence; HEMTs; Heterojunction bipolar transistors; Impedance; MODFETs; Signal design; Signal processing; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967056

Filename

967056