• DocumentCode
    37569
  • Title

    Use of 22 nm Litho SEM Non-visual Defect Data as a Process Quality Indicator

  • Author

    Boye, Carol A. ; Knupp, Seth ; Ghaskadvi, Rajesh

  • Author_Institution
    IBM Corp., Albany, NY, USA
  • Volume
    26
  • Issue
    4
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    482
  • Lastpage
    487
  • Abstract
    This paper proposes that the non-visual defect rate for Litho layers is an indicator of the quality of the process up to and including Litho. “Non-visual” (NV) defects are those detected by optical defect inspection systems but not re-detected by the SEM review tool. The defects are occurring either on or below the surfaces of the films deposited immediately prior to lithography, or buried within the actual lithographic films. Rather than ignore the non-visual data obtained during defect inspection post lithography, the NV rate can be used as a quality indicator to trigger immediate action for root cause determination. This paper presents a new strategy for responding to Litho SEM NV defects based on a detailed study of the origin of these defects.
  • Keywords
    automatic optical inspection; lithography; production engineering computing; quality control; scanning electron microscopy; semiconductor device manufacture; lithography SEM nonvisual defect data; optical defect inspection systems; process quality indicator; root cause determination; size 22 nm; Films; Inspection; Lithography; Optimization; Defect inspection; Litho defectivity; Non-viusal defects;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2013.2273294
  • Filename
    6558869