Title :
High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates
Author :
Green, B.M. ; Tilak, V. ; Sungjae Lee ; Hyungtak Kim ; Smart, J.A. ; Webb, K.J. ; Shealy, J.R. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Broadband, high power cascode AlGaN/GaN HEMT MMIC amplifiers with high gain and power-added efficiency (PAE) have been fabricated on high-thermal conductivity SiC substrates. A cascode gain cell exhibiting 5 W of power at 8 GHz with a small signal gain of 19 dB was realized. A broadband amplifier MMIC using these cascode cells in conjunction with a lossy-match input matching network was designed, fabricated, and evaluated, showing a useful operating range of DC-8 GHz with an output power of 5-7.5 W and a PAE of 20-33% respectively. A nonuniform distributed amplifier (NDA) based on this same process yielded an output power of 3-6 W over a DC-8 GHz bandwidth with an associated PAE of 13-31%.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; distributed amplifiers; field effect MMIC; gallium compounds; impedance matching; silicon compounds; wideband amplifiers; 0 to 8 GHz; 13 to 31 percent; 19 dB; 20 to 33 percent; 3 to 6 W; 5 W; 5 to 7.5 W; 8 GHz; AlGaN-GaN-SiC; HEMT MMICs; MMIC amplifiers; PAE; SiC; broadband amplifier; cascode gain cell; high-thermal conductivity substrates; lossy-match input matching network; nonuniform distributed amplifier; output power; power-added efficiency; small signal gain; Aluminum gallium nitride; Broadband amplifiers; Conductivity; Gallium nitride; HEMTs; High power amplifiers; MMICs; Power amplifiers; Power generation; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967074
