Title :
X-band MMIC power amplifier with an on-chip temperature compensation circuit
Author :
Yamauchi, K. ; Iyama, Y. ; Yamaguchi, M. ; Ikeda, Y. ; Takagi, T.
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
An X-band MMIC power amplifier with an on-chip temperature compensation circuit has been presented. The temperature compensation circuit is composed of a diode and a resistor. The compensation circuit is applied to a 4 stage X-band MMIC power amplifier. The gain variation is improved from 5.5 dB to 1.3 dB in the temperature range between -10 degC and +80 degC.
Keywords :
III-V semiconductors; MMIC power amplifiers; compensation; field effect MMIC; gallium arsenide; -10 to 80 degC; GaAs; MMIC power amplifier; X-band; gain variation; on-chip temperature compensation circuit; temperature range; Circuits; Diodes; FETs; Gallium arsenide; MMICs; Power amplifiers; Resistors; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967077
