A highly-integrated low-power direct conversion receiver MMIC for broadband wireless applications

Author

Matinpour, B. ; Yoo, S. ; Laskar, J.

Author_Institution

Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1089

Abstract

In this paper, we present a highly integrated low-power direct conversion receiver MMIC for broadband wireless applications at C-band. This receiver chip is fabricated in a 0.6 /spl mu/m commercial GaAs MESFET process and operates on only 90 mW of dc power consumption. Using an integrated switched LNA and direct-coupled baseband amplifiers, this receiver demonstrates a conversion gain of 25 dB, NF of 6.7 dB, dc offset below -70 dBm, IIP2 of +20 dBm, and IIP3 of -15 dBm in the high-gain mode and +15 dBm in the low-gain mode at 5.8 GHz.

Keywords

MESFET integrated circuits; MMIC amplifiers; field effect MMIC; low-power electronics; wideband amplifiers; 0.6 micron; 25 dB; 5.8 GHz; 6.7 dB; 90 mW; C-band; IIP2; IIP3; MESFET process; broadband wireless applications; conversion gain; dc offset; dc power consumption; direct-coupled baseband amplifiers; high-gain mode; integrated switched LNA; low-gain mode; low-power direct conversion receiver MMIC; Application software; Baseband; Energy consumption; FETs; Gallium arsenide; Image converters; Linearity; MMICs; Noise measurement; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967081

Filename

967081