DocumentCode :
375733
Title :
Low-frequency noise in nanomaterials and nanodevices
Author :
Mihaila, Mihai N.
Author_Institution :
Nat. Inst. of Microtechnology, Bucharest, Romania
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
31
Abstract :
The status of low frequency noise in nanodevices and nanomaterials is briefly surveyed. The very old yet hot problematics of the 1/f noise is discussed in the light of some new achievements in the nanoscience. It is shown that the very old question regarding the topology of the noise sources (surface or bulk origin) of this phenomenon is clarified, while the microscopic origin of the phenomenon cannot be unambiguously answered. Although present even in the quantum dots, the random telegraph signal (RTS) noise as a fundamental component of the 1/f spectrum seems to be a non sequitur. McWhorter model cannot explain the occurrence of the 1/f noise in carbon nanotubes. Surface anharmonicity is proposed as a possible ingredient in the generation of the very high noise level observed in carbon nanotubes, while the increased phonon density of states in nanomaterials seems to be a source of higher noise levels. Low frequency noise appears as a powerful tool to characterize nanomaterials and nanodevices
Keywords :
1/f noise; anharmonic lattice modes; carbon nanotubes; nanostructured materials; quantum dots; surface phonons; 1/f noise; C; McWhorter model; RTS noise; carbon nanotube; low-frequency noise; nanodevice; nanomaterial; phonon density of states; quantum dot; surface anharmonicity; 1f noise; Carbon nanotubes; Low-frequency noise; Microscopy; Nanomaterials; Noise generators; Noise level; Semiconductor device noise; Semiconductor diodes; Telegraphy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967411
Filename :
967411
Link To Document :
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