Title :
Fabrication of SiO/sub 2/ thin films by laser ablation of silicone
Author :
Okoshi, M. ; Kuramatsu, M. ; Inoue, N.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nat. Defense Acad., Yokosuka, Japan
Abstract :
We deposited SiO/sub 2/ films at room temperature by 193-nm ArF laser ablation of silicone rubber in an oxygen atmosphere. For fabricating SiO/sub 2/ films, we found the optimum conditions of laser fluence and oxygen gas pressure. The Fourier transform infrared spectroscopy (FT-IR) spectra of films deposited at two different laser fluences are shown.
Keywords :
Fourier transform spectra; infrared spectra; pulsed laser deposition; silicon compounds; silicone rubber; transparency; 193 nm; ArF; ArF laser ablation; Fourier transform infrared spectroscopy; O/sub 2/; O/sub 2/ gas pressure; SiO/sub 2/; SiO/sub 2/ thin films; fabrication; laser fluence; optimum conditions; oxygen atmosphere; room temperature; silicone rubber; Atmospheric measurements; Gas lasers; Laser ablation; Optical device fabrication; Optical films; Rubber; Semiconductor thin films; Silicon compounds; Spectroscopy; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967718
