Light-emitting properties of monodispersed silicon nanocrystallites synthesized by pulsed laser ablation in inert background gas

Author

Yoshida, T. ; Makino, T. ; Suzuki, N. ; Yamada, Y.

Author_Institution

Adv. Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Kawasaki, Japan

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

We have developed light-emitting devices (LEDs) of monodispersed silicon (Si) nanocrystallite active regions synthesized by pulsed laser ablation in inert background gas (PLA-IBG). The light emission spectrum had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap, at room temperature.

Keywords

electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; pulsed laser deposition; silicon; Si; current-voltage characteristics; forward bias condition; functional nanostructured materials; inert background gas; integrated process system; light emission spectrum; light-emitting devices; monodispersed nanocrystallite active regions; narrow bandwidth; pulsed laser ablation; rectifying behavior; reverse bias condition; thermal annealing; Electrodes; Gas lasers; Helium; Laser ablation; Light emitting diodes; Nanoscale devices; Nanostructured materials; Optical pulses; Silicon; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967720

Filename

967720