DocumentCode
375765
Title
Broadened gain bandwidth in diode-pumped Yb-doped materials at low temperature
Author
Kawanaka, J. ; Yasuhara, A. ; Yamakawa, Kiyoshi
Author_Institution
Kansai Establ., Japan Atomic Energy Res. Inst., Kyoto, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
Each gain bandwidth of diode-pumped Yb:glass and Yb:YLF was dramatically broadened to 50 nm at 8 K from 20 nm at room temperature and to 35 nm from 20 nm, respectively.
Keywords
laser transitions; optical pumping; solid lasers; ytterbium; 8 K; LiYF4:Yb; YLF:Yb; Yb:YLF laser; Yb:glass laser; broadened gain bandwidth; compact size; diode-pumped Yb-doped materials; high field laser material; improved small signal gain; laser output power; laser transition; low temperature; quasi-three-level system; tuning range; Bandwidth; Diodes; Laser theory; Laser tuning; Optical materials; Oscillators; Power lasers; Pulse amplifiers; Pump lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967738
Filename
967738
Link To Document