Title :
Broadened gain bandwidth in diode-pumped Yb-doped materials at low temperature
Author :
Kawanaka, J. ; Yasuhara, A. ; Yamakawa, Kiyoshi
Author_Institution :
Kansai Establ., Japan Atomic Energy Res. Inst., Kyoto, Japan
Abstract :
Each gain bandwidth of diode-pumped Yb:glass and Yb:YLF was dramatically broadened to 50 nm at 8 K from 20 nm at room temperature and to 35 nm from 20 nm, respectively.
Keywords :
laser transitions; optical pumping; solid lasers; ytterbium; 8 K; LiYF4:Yb; YLF:Yb; Yb:YLF laser; Yb:glass laser; broadened gain bandwidth; compact size; diode-pumped Yb-doped materials; high field laser material; improved small signal gain; laser output power; laser transition; low temperature; quasi-three-level system; tuning range; Bandwidth; Diodes; Laser theory; Laser tuning; Optical materials; Oscillators; Power lasers; Pulse amplifiers; Pump lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967738
