Sub-wavelength structure for anti-reflection fabricated by fast atom beam etching

Author

Hane, K. ; Kanamori, Y.

Author_Institution

Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

We fabricated two-dimensional sub-wavelength structured (SWS) surfaces on crystal silicon (Si) and gallium aluminum arsenide (GaAlAs) substrates. The SWS surfaces had 150-200 nm period tapered gratings. In visible wavelength, the reflectivities decreased drastically on the SWS surfaces.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; electron beam lithography; elemental semiconductors; etching; gallium arsenide; micro-optics; optical fabrication; reflectivity; silicon; 150 to 200 nm; 2D subwavelength structured surfaces; GaAlAs; Si; anisotropic etching; antireflection surfaces; conical profile gratings; coupled-wave analysis; electron beam lithography; fast atom beam etching; large field of view; pattern transfer; positive resist; reflectivities; surface-relief grating; tapered gratings; visible wavelength; wide spectral bandwidth; Atomic beams; Etching; Fabrication; Gratings; Optical polarization; Optical reflection; Optical surface waves; Reflectivity; Resists; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967788

Filename

967788