Title :
Sub-wavelength structure for anti-reflection fabricated by fast atom beam etching
Author :
Hane, K. ; Kanamori, Y.
Author_Institution :
Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
Abstract :
We fabricated two-dimensional sub-wavelength structured (SWS) surfaces on crystal silicon (Si) and gallium aluminum arsenide (GaAlAs) substrates. The SWS surfaces had 150-200 nm period tapered gratings. In visible wavelength, the reflectivities decreased drastically on the SWS surfaces.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; electron beam lithography; elemental semiconductors; etching; gallium arsenide; micro-optics; optical fabrication; reflectivity; silicon; 150 to 200 nm; 2D subwavelength structured surfaces; GaAlAs; Si; anisotropic etching; antireflection surfaces; conical profile gratings; coupled-wave analysis; electron beam lithography; fast atom beam etching; large field of view; pattern transfer; positive resist; reflectivities; surface-relief grating; tapered gratings; visible wavelength; wide spectral bandwidth; Atomic beams; Etching; Fabrication; Gratings; Optical polarization; Optical reflection; Optical surface waves; Reflectivity; Resists; Surface waves;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967788
