Dielectric suppression, blue-shift in photo luminescence and absorption of nanometric semiconductors

Author

Sun, C.Q. ; Sun, X.W. ; Tay, B.K. ; Lau, S.P. ; Chen, T.P. ; Huang, H.T. ; Li, S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

It is shown that the dielectric depression and the blue-shift in photo luminescence/absorption originates from the enhancement of the crystal field due to surface bond contraction and the rise of surface-to-volume ratio of nanometric semiconductors.

Keywords

absorption coefficients; bonds (chemical); energy gap; nanostructured materials; optical susceptibility; photoluminescence; semiconductors; spectral line shift; band gap; binding energy; blue-shift; coordination number; dielectric suppression; dielectric susceptibility; direct band gap semiconductors; indirect band gap semiconductors; model prediction; nanometric semiconductors; photoabsorption; photoluminescence; reduced bond length; surface bond contraction; surface-to-volume ratio; Absorption; Atomic layer deposition; Bonding; Crystalline materials; Dielectrics; Luminescence; Nanoscale devices; Photonic band gap; Semiconductor materials; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967789

Filename

967789