Title :
Dielectric suppression, blue-shift in photo luminescence and absorption of nanometric semiconductors
Author :
Sun, C.Q. ; Sun, X.W. ; Tay, B.K. ; Lau, S.P. ; Chen, T.P. ; Huang, H.T. ; Li, S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
It is shown that the dielectric depression and the blue-shift in photo luminescence/absorption originates from the enhancement of the crystal field due to surface bond contraction and the rise of surface-to-volume ratio of nanometric semiconductors.
Keywords :
absorption coefficients; bonds (chemical); energy gap; nanostructured materials; optical susceptibility; photoluminescence; semiconductors; spectral line shift; band gap; binding energy; blue-shift; coordination number; dielectric suppression; dielectric susceptibility; direct band gap semiconductors; indirect band gap semiconductors; model prediction; nanometric semiconductors; photoabsorption; photoluminescence; reduced bond length; surface bond contraction; surface-to-volume ratio; Absorption; Atomic layer deposition; Bonding; Crystalline materials; Dielectrics; Luminescence; Nanoscale devices; Photonic band gap; Semiconductor materials; Sun;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967789
