DocumentCode
375810
Title
Solid-immersion photoluminescence microscopy of novel GaAs nano-structures
Author
Yoshita, M. ; Akiyama, H.
Author_Institution
Inst. for Solid State Phys., Univ. of Tokyo, Chiba, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.
Keywords
III-V semiconductors; carrier density; gallium arsenide; optical microscopy; photoluminescence; semiconductor quantum wells; GaAs; GaAs facet-growth nano-structures; [110] quantum wells; carrier distribution; electronic state spatial distribution; high-spatial resolution; optical microscopy; photoluminescence spectroscopy; solid-immersion photoluminescence imaging; submicron scale; Gallium arsenide; Lenses; Molecular beam epitaxial growth; Optical imaging; Optical microscopy; Optical surface waves; Photoluminescence; Solids; Spatial resolution; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967794
Filename
967794
Link To Document