Title :
Solid-immersion photoluminescence microscopy of novel GaAs nano-structures
Author :
Yoshita, M. ; Akiyama, H.
Author_Institution :
Inst. for Solid State Phys., Univ. of Tokyo, Chiba, Japan
Abstract :
By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; optical microscopy; photoluminescence; semiconductor quantum wells; GaAs; GaAs facet-growth nano-structures; [110] quantum wells; carrier distribution; electronic state spatial distribution; high-spatial resolution; optical microscopy; photoluminescence spectroscopy; solid-immersion photoluminescence imaging; submicron scale; Gallium arsenide; Lenses; Molecular beam epitaxial growth; Optical imaging; Optical microscopy; Optical surface waves; Photoluminescence; Solids; Spatial resolution; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967794
