DocumentCode
375811
Title
Near-field imaging and spectroscopy of localized and delocalized excitons in semiconductor nanostructures
Author
Lienau, C. ; Intonti, F. ; Emiliani, V. ; Elasaesser, T. ; Savona, V. ; Runge, E. ; Zimmermann, R. ; Notzel, R. ; Ploog, K.H.
Author_Institution
Max-Born-Inst. fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
We resolve the characteristic emission features of excitons in a single GaAs quantum wire using near-field photoluminescence spectroscopy. We report emission from both localized excitons and quasi-one-dimensional excitons that are delocalized over a length of up to several /spl mu/m.
Keywords
III-V semiconductors; excitons; gallium arsenide; localised states; photoluminescence; semiconductor quantum wires; GaAs; GaAs quantum wire; delocalized excitons; localized excitons; localized states; near-field PL spectroscopy; near-field imaging; photoluminescence; quasi-one-dimensional excitons; semiconductor nanostructures; two-energy autocorrelation function; Excitons; Gallium arsenide; Laboratories; Lenses; Optical imaging; Semiconductor nanostructures; Spatial resolution; Spectroscopy; Stimulated emission; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967795
Filename
967795
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