• DocumentCode
    3758223
  • Title

    Characterisation of 10 kV 10 A SiC MOSFET

  • Author

    Emanuel-Petre Eni;Bogdan Ioan Incau;Tamas Kerekes;Remus Teodorescu;Stig Munk-Nielsen

  • Author_Institution
    Department of Energy Technology, Aalborg University, Denmark
  • fYear
    2015
  • Firstpage
    675
  • Lastpage
    680
  • Abstract
    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.
  • Keywords
    "Silicon carbide","Logic gates","Temperature measurement","MOSFET","Temperature","Voltage measurement","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION), 2015 Intl Aegean Conference on
  • Type

    conf

  • DOI
    10.1109/OPTIM.2015.7427016
  • Filename
    7427016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3758223