DocumentCode :
3758224
Title :
Comparing different switching techniques for Silicon Carbide MOSFET assisted Silicon IGBT based hybrid switch
Author :
Sadik Ozdemir;Fatih Acar;Ugur S. Selamogullari
Author_Institution :
Department of Electiical Engineering, Yildiz Technical University, Istanbul, Turkey
fYear :
2015
Firstpage :
476
Lastpage :
481
Abstract :
This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and if is shown that the hybrid switch performs better compared to IGBT alone operation.
Keywords :
"Insulated gate bipolar transistors","Switches","MOSFET","Silicon carbide","Switching circuits","Energy loss","Inverters"
Publisher :
ieee
Conference_Titel :
Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION), 2015 Intl Aegean Conference on
Type :
conf
DOI :
10.1109/OPTIM.2015.7427017
Filename :
7427017
Link To Document :
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