Title :
Development of novel semiconductor devices
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
The physical background of novel small-scale fast semiconductor devices has been presented. The performance constrains of hot electron and quantum devices have been discussed. The prospects of development and application of these devices has been indicated. Experimental structures studied at the Institute of Electronic Materials Technology and technologies needed for their realisation have also been presented.
Keywords :
"Semiconductor devices","Gallium arsenide","FETs","Materials science and technology","Laboratories","Particle scattering","Electron devices","Temperature","Industrial relations","Electron mobility"
Conference_Titel :
Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.742820
