• DocumentCode
    3758436
  • Title

    Area optimization in 8T SRAM cell for low power consumption

  • Author

    M.S.Z Sarker;Mokammel Hossain;Nozmul Hossain;Md. Rasheduzzaman;Md.Ashraful Islam

  • Author_Institution
    Dept. of EEE, IIUC, Chittagong, Bangladesh
  • fYear
    2015
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.
  • Keywords
    "SRAM cells","Power demand","Transistors","MOS devices","CMOS integrated circuits","Cache memory"
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Electronic Engineering (ICEEE), 2015 International Conference on
  • Print_ISBN
    978-1-5090-1939-7
  • Type

    conf

  • DOI
    10.1109/CEEE.2015.7428233
  • Filename
    7428233