DocumentCode :
3758436
Title :
Area optimization in 8T SRAM cell for low power consumption
Author :
M.S.Z Sarker;Mokammel Hossain;Nozmul Hossain;Md. Rasheduzzaman;Md.Ashraful Islam
Author_Institution :
Dept. of EEE, IIUC, Chittagong, Bangladesh
fYear :
2015
Firstpage :
117
Lastpage :
120
Abstract :
Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.
Keywords :
"SRAM cells","Power demand","Transistors","MOS devices","CMOS integrated circuits","Cache memory"
Publisher :
ieee
Conference_Titel :
Electrical & Electronic Engineering (ICEEE), 2015 International Conference on
Print_ISBN :
978-1-5090-1939-7
Type :
conf
DOI :
10.1109/CEEE.2015.7428233
Filename :
7428233
Link To Document :
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