Title :
Japanese CELRAP laser fabrication: high power, strained InGaAs-InGaAsP-InP quantum-well lasers emitting at 1.9-/spl mu/m
Author :
Ota, K. ; Kobayashi, K. ; Komatsu, K. ; Saito, H.
Author_Institution :
Tech. Res. & Dev. Inst., Japan Defense Agency, Tokyo, Japan
Abstract :
High power InGaAs-InGaAsP-InP quantum-well lasers operating at 1.9-/spl mu/m are fabricated and evaluated. Eight 2-stripe array lasers are stacked to achieve 8 W CW output power with a maximum power efficiency of 11.2% at 5 W operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor laser arrays; 1.9 micron; 11.2 percent; 2-stripe array lasers; 5 W; 8 W; CW output power; InGaAs-InGaAsP-InP; Japanese CELRAP laser fabrication; high power strained InGaAs-InGaAsP-InP quantum-well lasers; maximum power efficiency; strained MQW lasers; Laser beams; Laser excitation; Laser modes; Optical arrays; Optical device fabrication; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor laser arrays;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967980
