• DocumentCode
    3758738
  • Title

    Hoop stress development on silicon dioxide liner in through silicon via

  • Author

    Juma Mary Atieno;Xuliang Zhang;He Song Bai

  • Author_Institution
    University of Electronic Science and Technology of China, Chengdu, China
  • fYear
    2015
  • Firstpage
    489
  • Lastpage
    493
  • Abstract
    Through Silicon Via Interconnects are usually protected with liners. A research on liners was done and conclusion made that they experience reliability problems like hoop stress which put them and the Through Silicon Via in danger. Simulation using Analysis Software was done on Silicon Dioxide liner. A Through Silicon Via of internal radius five micrometers, silicon liner of thickness two micrometers and height one micrometer was used. The liner was subjected to an internal pressure of one thousand micro Pascal. From mechanical Analysis System Parametric Design Language fourteen, it was confirmed that hoop stress surely exists in liners and ways should be proposed to protect them alongside the Through Silicon Via.
  • Keywords
    "Silicon","Decision support systems","Reliability","Fabrication","Three-dimensional displays","Polymers","Carbon nanotubes"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Information Technology, Electronic and Automation Control Conference (IAEAC), 2015 IEEE
  • Print_ISBN
    978-1-4799-1979-6
  • Type

    conf

  • DOI
    10.1109/IAEAC.2015.7428601
  • Filename
    7428601