DocumentCode
376029
Title
He+-implanted InxGa1-xAsy P1-y (λg=1.3 μm) tunnel junctions and their application as current blocking layers
Author
Wang, Hongsheng ; Forrest, Stephen R.
Author_Institution
Center for Photonics & Optoelectronic Mater., Princeton Univ., NJ, USA
Volume
2
fYear
2001
fDate
2001
Firstpage
630
Abstract
Tunnel junctions have attracted a great deal of renewed interests in the field of optoelectronic devices in recent years due to their applications in edge-emitting lasers, short- and long-wavelength VCSELs. In addition to enabling low resistance conduction, tunnel junctions can easily be destroyed by ion-implantation or dopant diffusion, thus forming an effective current blocking layer. This work explores the properties of tunnel junctions formed in InxGa1-xAsyP1-y (λ g=1.3 μm) and their feasibility as current blocking layers in 1.55 μm wavelength optoelectronic devices
Keywords
III-V semiconductors; gallium arsenide; indium compounds; ion implantation; semiconductor heterojunctions; spontaneous emission; surface emitting lasers; tunnelling; 1.3 micron; 1.55 micron; He+-implanted tunnel junctions; InGaAsP; VCSEL; current blocking layers; current-voltage characteristics; defect-assisted tunneling; differential resistance; free carrier absorption; gas-source MBE; low resistance conduction; n-p-n structure; optoelectronic devices; quantum well laser structures; slope efficiency; spontaneous emission intensity; threshold current; Absorption; Apertures; Laser modes; Laser theory; Optical materials; Optoelectronic devices; Quantum well lasers; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location
San Diego, CA
ISSN
1092-8081
Print_ISBN
0-7803-7105-4
Type
conf
DOI
10.1109/LEOS.2001.968973
Filename
968973
Link To Document