Title :
Over 100 mW high power operation of 1625 nm L-band DFB laser diodes
Author :
Kise, T. ; Hiraiwa, K. ; Koizumi, S. ; Yamanaka, N. ; Funabashi, M. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Summary form only given. We demonstrate high power L-band DFB laser diodes with an output power over 100mW even at the wavelength of 1625nm. To suppress further degradation of temperature characteristics, we adjust carrier confinement conditions, still keeping high slope efficiency. We also investigate wavelength dependence of characteristic temperature of threshold current over C- and L-band wavelength region. The active region of the fabricated laser is composed of a strain-compensated InGaAsP MQW-SCH
Keywords :
Debye temperature; III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; quantum well lasers; 100 mW; 1625 nm; C-band wavelength region; InGaAsP; L-band DFB laser diodes; L-band wavelength region; carrier confinement; characteristic temperature; high power L-band DFB laser diodes; high slope efficiency; mW high power operation; output power; strain-compensated InGaAsP MQW laser; temperature characteristics; threshold current; wavelength dependence; Degradation; Diode lasers; Distributed feedback devices; Fiber lasers; L-band; Laser feedback; Power generation; Temperature; Threshold current; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969058
