Title :
A 40 Gb/s fully differential Transimpedance amplifier in 0.13 ?m SiGe BiCMOS technology
Author :
Xianliang Luo;Wei Li;Pan Tang
Author_Institution :
Institute of RF- & OE-ICs Southeast University, Nanjing 210096, China
Abstract :
A new differential configuration Transimpedance Amplifier (TIA) with low-voltage and broadband characteristic has been implemented in 0.13 μm SiGe BiCMOS Technology. The cascode configuration has been adopted to reduce the voltage supply and the Miller capacitance of the input transistors. The TIA possesses 65.5 dBΩ differential transimpedance gain and 32 GHz measured bandwidth. The TIA circuit including the differential TIA, voltage amplifying stage, Operation Transconductance Amplifier (OTA) and Current Mode Logic (CML) output buffer consumes 117 mW power from a 2.5 V voltage supply. The chip size with the pads is only 484μm×486μm.
Keywords :
"Bandwidth","BiCMOS integrated circuits","Gain","Silicon germanium","Semiconductor device measurement","Capacitance","Transistors"
Conference_Titel :
Intelligent Signal Processing and Communication Systems (ISPACS), 2015 International Symposium on
DOI :
10.1109/ISPACS.2015.7432787
