• DocumentCode
    3760679
  • Title

    Design of broadband Low Noise Amplifier (LNA) 4G LTE TDD 2.3 GHz for modem application

  • Author

    Ahmad Sidik;Maulana Yusuf Fathany;Basuki Rahmatul Alam

  • Author_Institution
    Electronics Research Group, School of Electrical Engineering and Informatics, Institute of Technology Bandung, Labtek VIII Building 3rd Fl, Jl Ganesha no 10, 40132, Indonesia
  • fYear
    2015
  • Firstpage
    488
  • Lastpage
    492
  • Abstract
    This paper discusses the design and simulation of Low Noise Amplifier (LNA) for 4G LTE communication system at 2.3 GHz. The design and simulation are performed on Advance Design System (ADS) design suite. Low noise transistor ATF-54143 with minimum noise figure of 0.46 dB is used with class A bias circuit. Drain current and drain to source voltage are measured to be 28.07 mA and 2.77 volt with supply voltage of 5 volt. Noise figure as low as 0.9 dB is used to compensate the 13.8 dB gain of the amplifier. Simulation with QPSK modulation and channel modeling is performed and yield the same transmitted and received data.
  • Keywords
    "Gain","Noise figure","Phase shift keying","Impedance","Low-noise amplifiers","Impedance matching"
  • Publisher
    ieee
  • Conference_Titel
    Intelligent Signal Processing and Communication Systems (ISPACS), 2015 International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPACS.2015.7432821
  • Filename
    7432821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3760679