Ultrafast electroabsorption modulators with traveling-wave electrodes

Author

Tamura, Munehisa ; Akage, Yuichi ; Yamanaka, Takayuki ; Takeuchi, Hiroaki ; Saitoh, Tadashi

Author_Institution

Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

1

fYear

2001

fDate

2001

Firstpage

97

Abstract

This paper reviews our recent activities on electroabsorption (EA) modulators, which incorporate traveling-wave (TW) type electrodes to overcome the capacitance-resistance (CR)-induced bandwidth limitation. A discrete TW-EA modulator and the first-ever TW-EA modulator integrated with a DFB laser (TW-EADFB) with a wide bandwidth of over 50 GHz are demonstrated

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; quantum well devices; semiconductor quantum wells; 50 GHz; DFB laser integration; EA-integrated devices; InGaAlAs-InAlAs; capacitance-resistance induced bandwidth limitation; tensile-strained InGaAlAs/InAlAs MQW layer; traveling-wave electrodes; ultrafast electroabsorption modulators; wide bandwidth; Bandwidth; Capacitance; Electrodes; Frequency; Optical interferometry; Optical modulation; Optical waveguides; Quantum well devices; Ultrafast optics; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969191

Filename

969191