Title :
Etch-depth dependence of laser diodes using angular filtering by total reflection
Author :
Rogg, J. ; Boucke, K. ; Kelemen, M.T. ; Rinner, F. ; Pletschen, W. ; Kiefer, R. ; Walther, M. ; Mikulla, M. ; Poprawe, R. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
High-brightness high-power laser diodes are gaining importance in a wide variety of applications. For direct use as a replacement for solid-state lasers in particular, laser diodes with high output power and good beam quality are necessary. Recently, we presented the realization of a new resonator concept for high brightness laser diodes, the so-called "Z-laser" (Rogg et al, Proc. SPIE vol. 4287, pp. 195-201, 2001). In this paper, we present data on the optimization of the internal reflecting boundaries of these devices
Keywords :
III-V semiconductors; aluminium compounds; brightness; etching; gallium arsenide; indium compounds; laser cavity resonators; light reflection; semiconductor lasers; InGaAs-AlGaAs; Z-laser; angular filtering; beam quality; etch-depth dependence; high-brightness laser diodes; high-power laser diodes; internal reflecting boundaries optimization; laser diodes; output power; resonator concept; solid-state laser replacement; standard InGaAs/AlGaAs laser structure; total reflection; Diode lasers; Etching; Filtering; Laser beams; Laser excitation; Mirrors; Optical reflection; Power generation; Pump lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969212
