Etch-depth dependence of laser diodes using angular filtering by total reflection

Author

Rogg, J. ; Boucke, K. ; Kelemen, M.T. ; Rinner, F. ; Pletschen, W. ; Kiefer, R. ; Walther, M. ; Mikulla, M. ; Poprawe, R. ; Weimann, G.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

141

Abstract

High-brightness high-power laser diodes are gaining importance in a wide variety of applications. For direct use as a replacement for solid-state lasers in particular, laser diodes with high output power and good beam quality are necessary. Recently, we presented the realization of a new resonator concept for high brightness laser diodes, the so-called "Z-laser" (Rogg et al, Proc. SPIE vol. 4287, pp. 195-201, 2001). In this paper, we present data on the optimization of the internal reflecting boundaries of these devices

Keywords

III-V semiconductors; aluminium compounds; brightness; etching; gallium arsenide; indium compounds; laser cavity resonators; light reflection; semiconductor lasers; InGaAs-AlGaAs; Z-laser; angular filtering; beam quality; etch-depth dependence; high-brightness laser diodes; high-power laser diodes; internal reflecting boundaries optimization; laser diodes; output power; resonator concept; solid-state laser replacement; standard InGaAs/AlGaAs laser structure; total reflection; Diode lasers; Etching; Filtering; Laser beams; Laser excitation; Mirrors; Optical reflection; Power generation; Pump lasers; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969212

Filename

969212