InP-based monolithic integrated circuits based on quantum well intermixing technology

Author

Marsh, John H.

Author_Institution

Intense Photonics, Glasgow, UK

Volume

1

fYear

2001

fDate

2001

Firstpage

167

Abstract

As an example of a monolithic photonic integrated circuit, we have fabricated 2 x 2 crosspoint switches in both the InGaAsP and AlGaInAs material systems. The switches have two input and two output waveguides each spaced 250 μm apart. They contain amplifiers, passive waveguides, and modulators. The passive sections contain multi-mode interference (MMI) couplers and a waveguide crossing region

Keywords

III-V semiconductors; chemical interdiffusion; electro-optical modulation; indium compounds; integrated optoelectronics; light emitting diodes; optical couplers; optical interconnections; optical planar waveguides; quantum well lasers; semiconductor optical amplifiers; semiconductor technology; 250 micron; AlGaInAs; InGaAsP; InP; input waveguides; modulators; multi-mode interference couplers; output waveguides; passive sections; passive waveguides; semiconductor optical amplifiers; waveguide crossing region; Arrayed waveguide gratings; Integrated circuit technology; Monolithic integrated circuits; Optical waveguides; Photonic band gap; Photonic integrated circuits; Semiconductor impurities; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969225

Filename

969225