High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers

Author

Goyal, A.K. ; Turner, G.W. ; Manfra, M.J. ; Foti, P.J. ; O´Brien, P. ; Sanchez, A.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

200

Abstract

We demonstrate that it is possible to create a mid-infrared laser structure which is free of aluminum by using GaSb as the optical cladding material in an integrated absorber laser structure. Based on previously published data at shorter wavelengths, the refractive index of the InGaAsSb used in the IA QW laser structures is extrapolated to be higher than that of GaSb This index step is an order of magnitude smaller than when using the more conventional AlAsSb as the optical cladding

Keywords

III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser modes; light absorption; optical pumping; quantum well lasers; refractive index; GaSb; IA laser structures; InAs-InGaSb; InGaAsSb; aluminum-free optically-pumped mid-IR semiconductor lasers; integrated absorber laser structure; mid-infrared laser structure; optical cladding material; refractive index; Aluminum; Gas lasers; Laser excitation; Laser modes; Optical pumping; Optical refraction; Optical variables control; Pump lasers; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969242

Filename

969242