Title :
High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers
Author :
Goyal, A.K. ; Turner, G.W. ; Manfra, M.J. ; Foti, P.J. ; O´Brien, P. ; Sanchez, A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
We demonstrate that it is possible to create a mid-infrared laser structure which is free of aluminum by using GaSb as the optical cladding material in an integrated absorber laser structure. Based on previously published data at shorter wavelengths, the refractive index of the InGaAsSb used in the IA QW laser structures is extrapolated to be higher than that of GaSb This index step is an order of magnitude smaller than when using the more conventional AlAsSb as the optical cladding
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser modes; light absorption; optical pumping; quantum well lasers; refractive index; GaSb; IA laser structures; InAs-InGaSb; InGaAsSb; aluminum-free optically-pumped mid-IR semiconductor lasers; integrated absorber laser structure; mid-infrared laser structure; optical cladding material; refractive index; Aluminum; Gas lasers; Laser excitation; Laser modes; Optical pumping; Optical refraction; Optical variables control; Pump lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969242
