• DocumentCode
    3761325
  • Title

    Nanoscale Memory Design for Efficient Computation: Trends, Challenges and Opportunity

  • Author

    S.K. Vishvakarma;B.S. Reniwal;V. Sharma;C.B. Khuswah;D. Dwivedi

  • Author_Institution
    VLSI Circuit &
  • fYear
    2015
  • Firstpage
    29
  • Lastpage
    34
  • Abstract
    The importance of embedded memory in contemporary multi-core processors and system-on-chip (SoC) for wearable electronics and IoT applications is growing. Intensive data processing in such processors and SoCs necessitates larger on-chip, energy-efficient static random access memory (SRAM). However, there are several challenges associated with low-voltage SRAMs. In this paper we have discussed the major hurdles at technology front for low power and robust SRAM design. We have discussed the different circuit techniques to mitigate these severe reliability concerns for embedded SRAM. Furthermore, this paper presented the recent development in embedded memory technology targeted to efficient computation. We have analyzed the effect of various device sizing on memory stability. The novel current mode circuit is also presented for high speed, offset tolerant SRAM sense amplifier. The Fin FET memory design is explored to reduce the external manifestation of device mismatch on SRAM stability and memory yield.
  • Keywords
    "SRAM cells","FinFETs","Circuit stability","Stability analysis","Threshold voltage"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronic and Information Systems (iNIS), 2015 IEEE International Symposium on
  • Type

    conf

  • DOI
    10.1109/iNIS.2015.58
  • Filename
    7434393